View BLV909_850348.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV909 UHF power transistor
Product specification Supersedes data of 1996 Nov 04 1999 Jun 25
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability * Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS * Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.
1 Top view 4
MSA467
BLV909
PINNING - SOT409B PIN 1, 4, 5, 8 2, 3 6, 7 SYMBOL e b c base collector DESCRIPTION emitter
8 handbook, halfpage
5
c b e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 960 f1 = 960; f2 = 960.1 VCE (V) 26 26 PL (W) 9 9 (PEP) Gp (dB) 9.5 9.5 C (%) 50 35 dim (dBc) - typ. -30
1999 Jun 25
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLV909
MAX. 70 30 3 1.5 1.5 29 +150 200 V V V A A
UNIT
W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 29 W; Tmb = 25 C; note 1 VALUE 6 UNIT K/W
Note to the Limiting values and Thermal characteristics 1. Transistor with metallized ground plane mounted on a printed-circuit board, see "Mounting and soldering section, Handbook SC19a."
MGD273
handbook, halfpage
10
MGG301
handbook, halfpage
50
Ptot (W) 40
IC (A) 30 1 20
(1)
(2)
10
10-1 1 10 VCE (V)
0 102 0 40 80 120 160 Tmb (oC)
Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1999 Jun 25
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 mA open base; IC = 15 mA open collector; IE = 0.3 mA VCE = 28 V; VBE = 0 VCE = 10 V; IC = 500 mA VCB = 26 V; IE = ie = 0; f = 1 MHz VCE = 26 V; IC = 0; f = 1 MHz MIN. 70 30 3 - 30 - - TYP. - - - - - 10 6
BLV909
MAX. UNIT - - - 0.75 120 - - pF pF V V V mA
MGD274
handbook, halfpage
100
handbook, halfpage
60
MGG302
hFE 80
(1)
C (pF) 40
60
(2)
40 20 20 Cc Cre 0 0 1 2 IC (A) 3 0 0 10 20 30 50 40 VCB (V)
(1) VCE = 26 V; tp = 500 s; 1 %. (2) VCE = 10 V.
f = 1 MHz.
Fig.5 Fig.4 DC current gain as a function of collector current; typical values.
Collector and feedback capacitance as a function of collector-base voltage; typical values.
1999 Jun 25
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Tmb = 25 C in a common emitter test circuit (see Figs 12 and 13). MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 960 f1 = 960; f2 = 960.1 VCE (V) 26 26 ICQ (mA) 25 25 PL (W) 9 9 (PEP) Gp (dB) 9.5, typ. 11.5 9.5, typ. 11.5 C (%)
BLV909
dim (dBc) - typ. -30
50, typ. 55 35, typ. 40
Ruggedness in class-AB operation The BLV909 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; VCE = 26 V; ICQ = 25 mA; Tmb = 25 C.
handbook, halfpage
16
MGG304
80 C (%) 60
handbook, halfpage
16
MGG303
Gp (dB) 12
Gp
PL (W) 12
C 8 40 8
4
20
4
0 0 4 8 PL (W)
0 12
0 0 0.4 0.8 1.2 PD (W) 1.6
VCE = 26 V; ICQ = 25 mA; f = 960 MHz.
VCE = 26 V; ICQ = 25 mA; f = 960 MHz.
Fig.6
Power gain and collector efficiency as functions of load power; typical values.
Fig.7
Load power as a function of drive power; typical values.
1999 Jun 25
5
Philips Semiconductors
Product specification
UHF power transistor
BLV909
handbook, halfpage
12
MGG305
handbook, halfpage
16
MGG306
80 C (%) 60
PL (PEP) (W)
Gp (dB) 12
8
Gp
8
40
4 4
C 20
0 0 0.2 0.4 0.6 PD (PEP) (W) 1.8
0 0 2 4 6 8 PL (PEP) (W)
0 10
VCE = 26 V; ICQ = 25 mA; f1 = 960 MHz; f2 = 960.1 MHz.
VCE = 26 V; ICQ = 25 mA; f1 = 960 MHz; f2 = 960.1 MHz.
Fig.8
Peak envelope load power as a function of drive power; typical values.
Fig.9
Power gain and efficiency as functions of peak envelope load power; typical values.
handbook, halfpage
-20
MGG307
handbook, halfpage
-20
MGG308
d3 (dBc) -30
dim (dBc) -30 d3
ICQ = 25 mA 60 mA
40 mA -40 10 mA -40
d5 d7
-50 0 4 8 PL (PEP) (W) 12
-50 0 4 8 PL (PEP) (W) 12
VCE = 26 V; f1 = 960 MHz; f2 = 960.1 MHz.
VCE = 26 V; ICQ = 25 mA; f1 = 960 MHz; f2 = 960.1 MHz.
Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values.
Fig.11 Intermodulation distortion as a function of peak envelope load power; typical values.
1999 Jun 25
6
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLV909
handbook, full pagewidth
C3 C4
L5
RF in
, ,,,,, ,,,,, ,,,,,
L6 C5 C6 C7 C1 L1 L2 L4 C2 L3
R1
+Vbias
+VS
DUT
, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,,
L12 C16 C15 C14 C13 C12 C11 L8 L10 L7 L9 C8
R2
C10
L11
C9 RF out
MBH092
Fig.12 Common emitter test circuit for class-AB operation at 900-960 MHz.
Mounting recommendations Both the metallized rear side and the leads of the device contribute to the heat flow. For the best results, it is recommended to mount the transistor on a grounded metallized area on the printed-circuit board, which is equipped with a large number of through metallized holes filled with solder. When the heatsink is mounted to the rear side of the printed-circuit board by means of heatsink compound, a thermal resistance between the mounting base and the heatsink of 0.9 K/W can be achieved.
1999 Jun 25
7
Philips Semiconductors
Product specification
UHF power transistor
List of components used in test circuit (see Figs 12 and 13) COMPONENT C1, C9 C2 C3, C7, C10, C16 C4, C15 C5, C11 C6, C12, C13, C14 C8 L1 L2 L3 L4 L5 L6, L12 L7 L8 L9 L10 L11 R1, R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. For operation at 820 to 900 MHz: C2 = 6.2 pF. 3. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; notes 1 and 2 multilayer ceramic chip capacitor; note 3 multilayer ceramic chip capacitor; note 3 tantalum SMD capacitor ceramic chip capacitor multilayer ceramic chip capacitor; note 1 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 RF choke grade 4S2 ferroxcube chip-bead stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 5 turns enamelled 1 mm copper wire metal film resistor 24.3 3.2 29.4 5.22 35 nH 100 , 0.4 W length 9.2 mm width 2 mm length 3.1 mm width 22 mm length 14.4 mm width 1.5 mm length 3.2 mm width 13 mm pitch 1.23 mm int. dia. 3.2 mm VALUE 24 pF 5.6 pF 110 pF 200 pF 10 F, 35 V 100 nF 8.2 pF 24.3 37.5 5.11 24.3 0.22 H length 9.85 mm width 2 mm length 3.63 mm width 1 mm length 4.1 mm width 13.3 mm length 2 mm width 2 mm DIMENSIONS
BLV909
CATALOGUE No.
2222 852 47104
4. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 10.2); thickness 0.64 mm.
1999 Jun 25
8
Philips Semiconductors
Product specification
UHF power transistor
BLV909
handbook, full pagewidth
65
40
3
+Vbias
+VS C16 C15 C14 C13 C12 R1 L6 C11 R2 L12 L11
C7 C6 C5 L5 C4 C3 C1 L1 L2 L4 C2 L3 L8 L7 C8
C10 L9 L10
C9
MBH093
Dimensions in mm. The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.13 Component layout and printed-circuit board and component lay-out for 900 to 960 MHz class-AB test circuit.
1999 Jun 25
9
Philips Semiconductors
Product specification
UHF power transistor
BLV909
MGD272
MGD271
handbook, halfpage
6
handbook, halfpage
16
Zi ()
ZL () 12
4 ri 8 xi 2 4
XL
RL
0 800
840
880
920
960 1000 f (MHz)
0 800
840
880
920
960 1000 f (MHz)
VCE = 26 V; ICQ = 25 mA; PL = 9 W; Tmb = 25 C.
VCE = 26 V; ICQ = 25 mA; PL = 9 W; Tmb = 25 C.
Fig.14 Input impedance as a function of frequency (series components); typical values.
Fig.15 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
16
MGG309
GP (dB) 12
handbook, halfpage
8
Zi
4
ZL
MBA451
0 800
840
880
920
960 1000 f (MHz)
VCE = 26 V; ICQ = 25 mA; PL = 9 W; Tmb = 25 C.
Fig.16 Power gain as a function of frequency; typical values.
Fig.17 Definition of transistor impedance.
1999 Jun 25
10
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Ceramic surface mounted package; 8 leads
BLV909
SOT409B
D
A
D2
B
H1 8 5
w2 B L
c
H
E2
E
A 1 e b 4 w1
Q1
0
2.5 scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.36 2.06 0.093 0.081 b 0.58 0.43 0.023 0.017 c 0.15 0.10 0.006 0.004 D 5.94 5.03 0.234 0.198 D2 5.16 5.00 0.203 0.197 E 4.93 4.01 0.194 0.158 E2 4.14 3.99 0.163 0.157 e 1.27 0.050 H 7.47 7.26 0.294 0.286 H1 4.39 4.24 0.173 0.167 L 0.84 0.69 0.033 0.027 Q1 0.10 0.00 0.004 0.000 w1 0.25 0.010 w2 0.25 0.010
2 0 2 0
OUTLINE VERSION SOT409B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-01-27
1999 Jun 25
11
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV909
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 25
12
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV909
1999 Jun 25
13
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV909
1999 Jun 25
14
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV909
1999 Jun 25
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 66
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/03/pp16
Date of release: 1999 Jun 25
Document order number:
9397 750 05707

▲Up To Search▲

Price & Availability of BLV909

	To Download BLV909 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .